In-lens field emission scanning electron microscopy (In-Lens FESEM) provides topographical information at magnifications of 250x to 1,000,000x, with virtually unlimited depth of field. In-lens FESEM produces clearer, less electrostatically distorted images than SEM, with spatial resolution down to 0.6 nanometers – three times better than regular FESEM and 10 times better than conventional SEM.
Other attributes of in-lens FESEM include:
- High-quality, low-voltage images with negligible electrical charging of samples (accelerating voltages ranging from 0.5 to 30 kilovolts).
- Essentially no need for placing conducting coatings on insulating materials.
Applications: Applications for in-lens FESEM include:
- Semiconductor cross-sections
- Gate widths
- Gate oxides
- Film thickness
- Construction analysis
- Advanced coatings
- Uniformity of thickness
- Uniformity of structure
Principle of Operation
A field emission cathode in the electron gun of a scanning electron microscope provides narrower probing beams at low as well as high electron energy. In conjunction with an in-lens system, this virtually eliminates aberration, resulting in optimal spatial resolution.
Differential Scanning Calorimetry (DSC)
Energy Dispersive Spectroscopy (EDS)
Field Emission Scanning Electron Microscopy (FESEM)
Fourier Transform Infrared (FTIR) Spectroscopy
In-Lens Field Emission Scanning Electron Microscopy (In-Lens FESEM)
Scanning Auger Microanalysis (SAM)
Scanning Electron Microscopy (SEM)
Scanning Probe Microscopy (SPM)/Atomic Force Microscopy (AFM)
Thermogravimetric Analysis (TGA)